Gallium Nitride Nanotube and its Application as Transistors

Fundamentals of Gallium Nitride Power Transistors

Structure A device’s cost effectiveness starts with leveraging existing production infrastructure. EPC’s process begins with silicon wafers. Utiilizing existing silicon processing equipment, a thin layer of Aluminum Nitride (AlN) is grown on the Silicon to isolate the device structure from the Substrate. The isolation layer for 200 V and below devices is 300 V. On top of this, a thick layer of ...

Gallium Nitride Photoconductive Detectors

Since 1994, the Applied Physics Laboratory has been collaborating with NASA Goddard Space Flight Center to develop photodetectors based on gallium nitride and aluminum gallium nitride material produced in the Milton S. Eisenhower Research and Technology Development Center. This article describes the results of our collaboration and highlights the development of gallium nitride photodetectors wi...

COMPARISON OF GALLIUM NITRIDE HIGH ELECTRON MOBILITY TRANSISTORS MODELING IN TWO AND THREE DIMENSIONS by

Transmission Electron Microscopy to Study Gallium Nitride Transistors Grown on Sapphire and Silicon Substrates

Ever since Gallium Nitride based high electron mobility transistor (HEMT) operation was demonstrated (Khan, 1993), there is a tremendous interest in the design and growth of GaN based transistors for high power device applications. The nitride semiconductors have wide application in the fields of high electron mobility transistors (HEMTs), light emitting diodes, and various high power electroni...

Carrier Localization in Gallium Nitride

In wide bandgap GaN a large number of interesting and important scientific questions remain to be answered. For example, the large free electron concentration reaching 1019 to 1020 cm-3 in nominally undoped material are ascribed to intrinsic defects because no chemical impurity has been found at such high concentrations. According to theoretical models a nitrogen vacancy acts as a donor but its...